Optimizing of Resistive Random Access Memory to Increase Its Practicability

Abstract

The progress in Integrated Circuit Technology, has promoted the development of emerging technologies like AI and Iot. It also requires the memory technology a high standard. Resistive random-access memory (RRAM) has the advantages of lower power consumption, fast speed and owns a strong compressibility, and it is regarded as the most promising NVM in next generation. This review explains basic principle of RRAM, several switching mechanisms, and different materials of the dielectric layer, then compares performance of RRAM in different materials. The RRAM that is completed can replace Flash memory due to its function currently, and can be applied to different fields like Neural Network and IoT. However, the experimental data of RRAM is still not stable. Till now, feasible methods include Defect Engineering, Nanostructure or looking for better materials. Ion doping is one of Defect Engineering, it has been used for years and is proven to be useful on improving the stability and memory window of RRAM. As the fundamental in the development of electronics, the optimization of RRAM definitely has great influence on it. If RRAM can be widely used in the future, the development of new technologies will inevitably be astonishing.