Research on the Latest Technological Advances and Trends in High-Frequency and High-Efficiency Power Electronic Converters
DOI:
https://doi.org/10.61173/90sz6269Keywords:
High-frequency, power electronic converters, soft-switching technology, zero-voltage switching (ZVS), zero-current switching (ZCS)Abstract
Power electronic converters play a vital role in modern power systems. To meet the surging demand for more efficient and compact devices for these applications, high frequency and high efficiency have become two main areas of development in power electronics. Increasing switching frequency in power electronics allows for a significant size reduction in passive components, thus enhancing the power density and reducing overall system size. However, high-frequency operation also causes higher switching losses and poses several design and efficiency challenges. These are further compounded by constraints arising from the harsh operating environment, which dictates the need to pursue new and better materials and circuit approaches to maximize converter efficiency. This study has explored the application of latest wide-bandgap semiconductor materials, including gallium nitride (GaN) and silicon carbide (SiC), as well as ultra-wide-bandgap semiconductor materials such as Ga2O3 and AlN. They present new opportunities for the development of high-frequency and high-efficiency power electronic converters that significantly allow for higher frequency operation, reducing most of the switching losses to achieve overall efficiency. Additionally, vital advancements in soft-switching techniques such as zero-voltage switching (ZVS) and zero-current switching (ZCS), also the development of new circuit topologies like LLC and DAB converters, are evaluated. Further, various gate driver designs, and their comparison are considered key strategies toward minimal energy losses at high frequencies. The review is based on a novel perspective of the bottlenecks left unchallenged so far in power conversion systems, considering some critical technological deficiencies and showing pathways to more efficient, compact, and reliable future solutions.References
[1] J. Millán, “A review of WBG power semiconductor devices,” CAS 2012 (International Semiconductor Conference), Sinaia, Romania, 2012, pp. 57-66, doi: 10.1109/ SMICND.2012.6400696.Fangfang. Research on power load forecasting based on Improved BP neural network. Harbin Institute of Technology, 2011.
[2] J. Hornberger, A. B. Lostetter, K. J. Olejniczak, T. McNutt, S. M. Lal and A. Mantooth, “Silicon-carbide (SiC) semiconductor power electronics for extreme high-temperature environments,” 2004 IEEE Aerospace Conference Proceedings (IEEE Cat. No.04TH8720), Big Sky, MT, USA, 2004, pp. 2538-2555 Vol.4
[3] E. A. Jones, F. F. Wang and D. Costinett, “Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges,” in IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 4, no. 3, pp. 707-719, Sept.
[4] F. C. Lee and Q. Li, “High-Frequency Integrated Point-of- Load Converters: Overview,” in IEEE Transactions on Power Electronics, vol. 28, no. 9, pp. 4127-4136, Sept. 2013
[5] R. R. Duarte, G. F. Ferreira, M. A. Dalla Costa and J. M. Alonso, “Performance comparison of Si and GaN transistors in a family of synchronous buck converters for LED lighting applications,” 2016 IEEE Industry Applications Society Annual Meeting, Portland, OR, USA, 2016, pp. 1-7
[6] M. Rosker, “The wide and the narrow: DARPA/MTO programs for RF applications in wide bandgap and antimonidebased semiconductors,” IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC ‘05., Palm Springs, CA, USA, 2005, pp. 4 pp.
[7] Mingfei Xu, Dawei Wang, Kai Fu, Dinusha Herath Mudiyanselage, Houqiang Fu, Yuji Zhao, A review of ultrawide bandgap materials: properties, synthesis and devices, Oxford Dean&Francis ISSN 2959-6157 Open Materials Science, Volume 2, Issue 1, 2022, itac004
[8] J. Y. Tsao, S. Chowdhury, M. A. Hollis, D. Jena, N. M. Johnson, K. A. Jones, R. J. Kaplar, S. Rajan, C. G. Van de Walle, E. Bellotti, C. L. Chua, R. Collazo, M. E. Coltrin, J. A. Cooper, K. R. Evans, S. Graham, T. A. Grotjohn, E. R. Heller, M. Higashiwaki, M. S. Islam, P. W. Juodawlkis, M. A. Khan, A. D. Koehler, J. H. Leach, U. K. Mishra, R. J. Nemanich, R. C. N. Pilawa-Podgurski, J. B. Shealy, Z. Sitar, M. J. Tadjer, A. F. Witulski, M. Wraback, J. A. Simmons, Adv. Electron. Mater. 2018, 4, 1600501.
[9] S. Roy, X. Zhang, A. B. Puthirath, A. Meiyazhagan, S. Bhattacharyya, M. M. Rahman, G. Babu, S. Susarla, S. K. Saju, M. K. Tran, L. M. Sassi, M. A. S. R. Saadi, J. Lai, O. Sahin, S. M. Sajadi, B. Dharmarajan, D. Salpekar, N. Chakingal, A. Baburaj, X. Shuai, A. Adumbumkulath, K. A. Miller, J. M. Gayle, A. Ajnsztajn, T. Prasankumar, V. V. J. Harikrishnan, V. Ojha, H. Kannan, A. Z. Khater, Z. Zhu, S. A. Iyengar, P. A. d. S. Autreto, E. F. Oliveira, G. Gao, A. G. Birdwell, M. R. Neupane, T. G. Ivanov, J. Taha-Tijerina, R. M. Yadav, S. Arepalli, R. Vajtai, P. M. Ajayan, Structure, Properties and Applications of Two- Dimensional Hexagonal Boron Nitride. Adv. Mater. 2021, 33, 2101589
[10] Zbigniew Galazka 2018 Semicond. Sci. Technol. 33 113001
[11] S. J. Pearton, Jiancheng Yang, Patrick H. Cary, F. Ren, Jihyun Kim, Marko J. Tadjer, Michael A. Mastro; A review of Ga2O3 materials, processing, and devices. Appl. Phys. Rev. 1 March 2018; 5 (1): 011301.
[12] Y. Wang, O. Lucia, Z. Zhang, S. Gao, Y. Guan and D. Xu, “A Review of High Frequency Power Converters and Related Technologies,” in IEEE Open Journal of the Industrial Electronics Society, vol. 1, pp. 247-260, 2020
[13] S. A. Q. Mohammed and J. -W. Jung, “A State-of-the-Art Review on Soft-Switching Techniques for DC–DC, DC–AC, AC–DC, and AC–AC Power Converters,” in IEEE Transactions on Industrial Informatics, vol. 17, no. 10, pp. 6569-6582, Oct.
[14] D. Maksimovic and S. Cuk, “A general approach to synthesis and analysis of quasi-resonant converters,” in IEEE Transactions on Power Electronics, vol. 6, no. 1, pp. 127-140, Jan. 1991, doi: 10.1109/63.65011.
[15] F. C. Lee, “High-frequency quasi-resonant converter technologies,” in Proceedings of the IEEE, vol. 76, no. 4, pp. 377-390, April 1988
[16] Strydom, J. T., M. A. De Rooij, and J. D. Van Wyk. “A comparison of fundamental gate-driver topologies for high frequency applications.” Nineteenth Annual IEEE Applied Power Electronics Conference and Exposition, 2004. APEC’04.. Vol. 2. IEEE, 2004.
[17] L. Cohen, Joseph B. Bernstein, Ilan Aharon. Gate Driver for High-Frequency High Power Electronics. TechRxiv. July 09, 2024.
[18] Liu, Y., Ge, L., & Zheng, S. (2008). Dual channel currentsource gate drivers for high-frequency dc-dc converters. 2008 3rd IEEE Conference on Industrial Electronics and Applications, 613-618.
[19] Moradpour, M., Franke, W., Pirino, P., & Gatto, G. (2020). Current Source Gate Driver for GaN E-HEMT in Hard-Switched High Power Applications. 2020 International Symposium on Power Electronics, Electrical Drives, Automation and Motion (SPEEDAM), 408-413.
[20] Kumar, A., Losito, M., Moradpour, M., & Gatto, G. (2022). Current Source Gate Driver for SiC MOSFETs in Power Electronics Applications. 2022 International Symposium on Power Electronics, Electrical Drives, Automation and Motion (SPEEDAM), 523-527.
[21] Qin, Y., Albano, B., Spencer, J., Lundh, J., Wang, B., Buttay, C., Tadjer, M., Dimarino, C., & Zhang, Y. (2023). Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective. Journal of Physics D: Applied Physics, 56.
[22] Yuan, C., Hanus, R., & Graham, S. (2022). A review of thermoreflectance techniques for characterizing wide bandgap semiconductors’ thermal properties and devices’ temperatures. Journal of Applied Physics.
[23] Gupta, C., & Pasayat, S. (2022). Vertical GaN and Vertical Ga2O3 Power Transistors: Status and Challenges. physica status solidi (a), 219.
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