Modification of New Semiconductor Materials by Doping
DOI:
https://doi.org/10.61173/hxjy6r89Keywords:
New semiconductor, doping, p-n junction, bandgap, solar cellAbstract
In the era of information, people’s lives are inseparable from electronic equipments. Semiconductors are key materials for manufacturing electronic equipment, which can be applied in multiple fields such as integrated circuits, solar cells, and so on. However, pure semiconductors have a single property, which are difficult to meet the design and usage requirements of different electronic devices. To solve the problem, introducing heteroatoms for modification to make them have more suitable performance will be a good way. Good semiconductor performance generally relies on precise control of the doping process. Different types of semiconductor materials typically require specific doping techniques to improve its performance. Adding small amounts of heteroatoms to pure semiconductors can significantly improve their conductivity by forming p/n junctions or achieving specific functions. Doping technology has been widely used in the semiconductor manufacturing industry. It is of great significance for the manufacturing of chips, photovoltaics and other devices. At present, there are still many shortcomings in doping technology. It may come across the semiconductor structure failure caused by doping, or difficulty in meeting performance requirements for use. Thereofore, continuous research and improvement are still needed. This paper reviewed the applications and the doping techniques of various semiconductor materials including two-dimensional semiconductors and organic semiconductors. In addition, it also provides prospects for their related applications and development.References
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