Research of Graphene Electronics and its Applications
DOI:
https://doi.org/10.61173/208hy243Keywords:
Graphene, Bandgap, DopingAbstract
Imagine a material as thin as a single atom, yet stronger than steel and more conductive than copper. This is graphene, a two-dimensional wonder material with a unique monolayer hexagonal honeycomb lattice structure. Its exceptional electrical properties, particularly its high carrier mobility, have sparked widespread interest in the scientific community for potential applications in electronics.However, because its conduction and valence bands intersect at the Dirac point, it behaves as a zero-bandgap semimetal, limiting its use in electronic devices. Therefore, opening a bandgap has become a focal research task in the scientific community. This paper explains the inherent conductivity of intrinsic graphene and summarizes how doping can theoretically further enhance its conductivity. Through further research on the development of graphene doping methods, this article primarily introduces how adsorption doping and lattice doping techniques can open the bandgap of graphene. It analyzes the stability of different doping types to achieve their application in nanoelectronic devices.
References
[1] Novoselov KS, Geim AK, Morozov SV, et al. Electric Field Effect in Atomically Thin Carbon Films. Science, 2004, 306(5696): 666-669.
[2] Ohta T, Bostwick A, Seyller T, et al. Controlling the Electronic Structure of Bilayer Graphene. Science, 2006, 313(5789): 951-954.
[3] Kubo R. Statistical-Mechanical Theory of Irreversible Processes. I. General Theory and Simple Applications to Magnetic and Conduction Problems. Journal of the Physical Society of Japan, 1957, 12(6): 570-586.
[4] Rodriguez-Lopez P, Kort-Kamp WJM, Dalvit DAR, et al. Casimir force phase transitions in the graphene family. Nature Communications, 2016, 8: 14699.
[5] Hanson GW, Yakovlev AB, Boag A, et al. Dyadic Green’s Functions for an Anisotropic, Non-Local Model of Biased Graphene. IEEE Transactions on Antennas and Propagation, 2008, 56(3): 747-757.
[6] Liu M, Zhang Y, Klimchitskaya GL, et al. Demonstration of an Unusual Thermal Effect in the Casimir Force from Graphene. Physical Review Letters, 2021, 126: 206802.
[7] Rodriguez-Lopez P, Antezza M, et al. Graphene conductivity: Dean&Francis Kubo model versus QFT-based model. arXiv preprint, arXiv:2403.02279.
[8] Cai L, Wang H, Yu G. Modifying Bandgap of Graphene and its Recent Developments. Progress in Physics, 2016, 36(1): 21- 33.
[9] Zhao L, He RL, Rim KT, et al. Visualizing Individual Nitrogen Dopants in Monolayer Graphene. Science, 2011, 333(6045): 999-1003.
[10] Zhong Y, Zhu H. Structure, properties and potential applications of graphene. Physics, 2018, 47(11): 704-714.
[11] Yavari F, Kritzinger C, Gaire C, et al. Tunable bandgap in graphene by the controlled adsorption of water molecules. Small, 2010, 6(22): 2535-2538.
[12] Moser J, Verdaguer A, Jiménez D, et al. The environment of graphene probed by electrostatic force microscopy. Physical Review Letters, 2008, 92(12): 123507.
[13] Crowther AC, Ghassaei A, Jung N, et al. Strong chargetransfer doping of 1 to 10 layers graphene by NO₂. ACS Nano, 2012, 6(2): 1865-1875.
[14] Ristein J, Starke U, Ley L. Surface Transfer Doping of Semiconductors. Science, 2006, 313(5790): 1057-1058.
[15] Gierz I, Lindroos M, Höchst H, et al. Atomic hole doping of graphene. Nano Letters, 2008, 8(12): 4603-4607.
[16] Wei P, Bao W, Pu Y, et al. Tuning the dirac point in CVD- grown graphene through solution processed n-type doping with 2-(2-methoxyphenyl)-1,3-dimethyl-2,3-dihydro-1H- benzoimidazole. Nano Letters, 2013, 13(5): 1890-1897.
[17] Wei D, Liu Y, Wang Y, et al. Synthesis of N-doped graphene by chemical vapor deposition and its electrical properties. Nano Letters, 2009, 9(5): 1752-1758.
[18] Zhang C, Fu L, Liu N, et al. Synthesis of nitrogendoped graphene using embedded carbon and nitrogen sources. Advanced Materials, 2011, 23(8): 1020-1024.
[19] Some S, Kim Y, Yoon Y, et al. Highly air-stable phosphorusdoped n-type graphene field-effect transistors. Advanced Materials, 2012, 24(40): 5481-5486.
[20] Li X, Fan L, Li Z, et al. Preparation and applications of graphene-based nanocomposites in optical and electronic devices. Advanced Engineering Materials, 2012, 2(4): 425-429.
[21] Wang H, Maiyalagan T, Wang X. Synthesis of boron-doped graphene monolayers using the sole solid feedstock by chemical vapor deposition. Small, 9(8): 1316-1320.
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