Developments and Applications of Field-Effect Transistor

Abstract

This review article delves into the development and future prospects of Field-Effect Transistors (FETs), tracing their evolution from the nascent theoretical concept proposed by Julius Lilienfeld in 1925. Over the years, FETs have traversed significant milestones, marking their progression from fundamental ideas to practical applications. Key among these milestones are the advent of the Metal-Oxide-Semiconductor FET (MOSFET), which revolutionized the electronics industry, the Fin FET, offering enhanced performance through three-dimensional structures, and the GateAll-Around FET (GAA-FET), promising even greater control and efficiency. It provides a systematic comparison of these technologies, dissecting their structural differences, evaluating performance metrics such as speed, power consumption, and scalability, and exploring their potential applications across diverse domains. While recent advancements in FET technology have primarily focused on structural innovations to mitigate the short channel effect, researchers are also actively exploring alternative avenues, including the use of novel materials and refined fabrication techniques, to further enhance FET performance and unlock new possibilities for electronic devices. This multifaceted approach underscores the dynamic and ever-evolving nature of FET technology, positioning it as a cornerstone for future advancements in electronics.