Systematic Analysis on The Development and Potential Use of Novel Semiconductors
DOI:
https://doi.org/10.61173/rezbea60Keywords:
Silicon, Gallium Nitride (GaN), Semiconductor Technology, High-Frequency PerformanceAbstract
Silicon-based transistors and integrated circuits, crucial for modern technology, are facing limitations due to scaling constraints. As transistors shrink, their performance is capped, affecting advanced technologies like AI, IoT, and 5G. Gallium nitride (GaN), with a melting point 200°C higher than silicon, presents a promising alternative due to its superior high-power and high-frequency performance. This essay reviews silicon’s semiconductor limitations and highlights the advancements in silicon carbide and Gan. The basic theories, such as electron mobility, energy level and covalent bond, are analyzed, and it is found that GaN is better than Sic and Si, but the three examples of semiconductors have different development fields in different fields. It compares the benefits of traditional silicon with these novel semiconductors, focusing on high-frequency and high-temperature performance. The essay also discusses current development, issues, and future predictions in semiconductor technology. Exploring new materials like GaN and silicon carbide addresses the technical challenges of silicon and enhances device performance, broadening technological possibilities.
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