Research on Temperature Monitoring and Control Technology for SiC MOSFET
DOI:
https://doi.org/10.61173/mj0y4f37Keywords:
SiC MOSFET, temperature monitoring, Temperature sensitive electrical parameters (TSEP), Thermal model, ReliabilityAbstract
This paper focuses on the reliability issues of silicon carbide (SiC) MOSFETs under harsh working conditions and conducts a detailed study on their junction temperature monitoring technology. The article reviews the two main methods for monitoring the junction temperature of current SiC MOSFETs: the physical contact method (such as infrared thermal imaging, direct measurement using thermocouples, fiber optic grating temperature measurement, etc.) and the electrical method based on thermosensitive electrical parameters (TSEP). The article thoroughly analyzes and compares the key characteristics of various TSEP parameters (such as threshold voltage, on-state voltage drops, body diode voltage, switching delay time, etc.), including their principles, temperature sensitivity, linearity, feasibility of online monitoring, and anti-aging ability. Through comparative analysis, the advantages and disadvantages of different TSEP methods in different application scenarios are clarified, and the future development direction of SiC MOSFET junction temperature monitoring technology is proposed. This article provides guiding recommendations for the selection and optimization of junction temperature detection methods for SiC MOSFETs.
References
[1] Yang, H. C., Simanjorang, R., & See, K. Y. (2018). A Method for Junction Temperature Estimation Utilizing Turnon Saturation Current for SiC MOSFET. In 2018 International Power Electronics Conference (IPEC-Niigata 2018 - ECCE Asia) (pp. 2296-2300). IEEE. https://doi.org/10.23919/ IPEC.2018.8507418
[2] Baker, N., Munk-Nielsen, S., Iannuzzo, F., & Liserre, M. (2016). IGBT Junction Temperature Measurement via Peak Gate Current. IEEE Transactions on Power Electronics, 31(5), 3784- 3793. https://doi.org/10.1109/TPEL.2015.2464714
[3] Baker, N., Munk-Nielsen, S., Iannuzzo, F., Dupont, L., & Liserre, M. (2015). Experimental Evaluation of IGBT Junction Temperature Measurement via Peak Gate Current. In 2015 17th European Conference on Power Electronics and Applications (EPE’15 ECCE Europe) (pp. 1-11). IEEE. https:// doi.org/10.1109/EPE.2015.7311905
[4] Li, Z., Yu, P., & Ji, B. (2024). A Novel Multi-Stage Ensemble Method for Online Junction Temperature Estimation of SiC MOSFETs. In 2024 IEEE Energy Conversion Congress and Exposition (ECCE) (pp. 7081-7086). IEEE. https://doi. org/10.1109/ECCE55643.2024.10861631
[5] Wen, H., Li, X., Zhang, F., et al. (2025). Junction Temperature Extraction for Silicon Carbide Power Devices: A Comprehensive Review. IEEE Transactions on Power Electronics, 40(2), 3090- 3110. https://doi.org/10.1109/TPEL.2024.3486149
[6] Wang, Y., Jiang, X., Shi, X., et al. (2023). Online Junction Temperature Estimation for SiC MOSFETs Using Drain Voltage Falling Edge Time. IEEE Transactions on Electron Devices, 70(10), 5228-5235. https://doi.org/10.1109/TED.2023.3306323
[7] Gonzalez, J. O., & Alatise, O. (2019). Challenges of Junction Temperature Sensing in SiC Power MOSFETs. In 2019 10th International Conference on Power Electronics-ECCE Asia (ICPE 2019 - ECCE Asia) (pp. 891-898). IEEE. https://doi. org/10.1109/ICPE2019-ECCEAsia42246.2019.8796731
[8] Baker, N., Liserre, M., Dupont, L., & Avenas, Y. (2014). Improved Reliability of Power Modules: A Review of Online Junction Temperature Measurement Methods. IEEE Industrial Electronics Magazine, 8(3), 17-27. https://doi.org/10.1109/ MIE.2014.2312427
[9] Sathik, M. H. M., Pou, J., Prasanth, S., et al. (2017). Comparison of IGBT Junction Temperature Measurement and Estimation Methods-A Review. In 2017 Asian Conference on Energy, Power and Transportation Electrification (ACEPT) (pp. 1-8). IEEE. https://doi.org/10.1109/ACEPT.2017.8300424
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