Current Status and Trends in EUV and NIL Lithography Process Development

Abstract

Lithography technology is a core process in semiconductor manufacturing. As device dimensions continue to shrink, the limitations of traditional deep ultraviolet lithography in terms of resolution and cost have become increasingly apparent. EUV and NIL have been proposed as nextgeneration solutions to overcome current process bottlenecks. This paper examines both technologies, covering fundamental principles, process performance, application scenarios, and key challenges. Comparative analysis reveals that EUV, leveraging its short wavelength advantage, demonstrates high resolution and precision in advanced logic processes, making it suitable for nodes at 7nm and below. However, it faces complex equipment, high costs, mask contamination, and photoresist stability issues. NIL, relying on contact-based mold replication, offers high resolution and low cost, enabling sub-5nm feature transfer. It excels in fields like LEDs, photovoltaics, and optical devices, though it remains constrained by issues such as template lifetime, alignment accuracy, and defect control. These technologies are not mutually exclusive but may complement each other in future process chains: EUV handles critical logic layers while NIL serves cost-sensitive and functional structure layers. Research indicates that synergistic development of EUV and NIL can balance resolution and cost, supporting technological evolution in the semiconductor industry. Lithography processes will advance toward higher precision, efficiency, and flexibility. The collaborative application of EUV and NIL is expected to drive industrial innovation and sustainable development.