CVD Growth, Heterojunction Construction, and Functional Applications of Graphene

Abstract

Graphene, a monolayer of sp²-hybridized carbon atoms, exhibits extraordinary electronic mobility (~200,000 cm²·V⁻¹·s⁻¹), thermal conductivity (~5000 W·m⁻¹·K⁻¹), and mechanical strength (~1 TPa), making it a core candidate for next-generation electronics, energy storage, and optoelectronics. Chemical Vapor Deposition (CVD) is the most reliable technique for high-quality graphene, enabling controllable synthesis of polycrystalline (single/ multi-layer) and single-crystal graphene. To address pristine graphene’s intrinsic zero-bandgap limitation and expand its functionality, graphene-based heterojunctions— with transition-metal dichalcogenides (TMDs), hexagonal boron nitride (h-BN), or other 2D Xenes—have been developed to tune its electronic and optical properties. This paper reviews graphene’s CVD growth mechanisms (polycrystalline/single-crystal), graphene heterojunctions’ construction/interface regulation, and their applications in the above fields. It confirms CVD’s key role in high-quality graphene synthesis and heterojunctions’ value in breaking graphene’s zero-bandgap constraint, while identifying challenges like large-area single-crystal growth and heterojunction interface defects; future research on atomic-level growth control and industrialization optimization will further promote graphene’s practical application.