A Review of the Synergistic Research on Materials, Physics, and Reliability of Wide Bandgap Semiconductor (SiC/GaN) Power Devices

Abstract

Wide bandgap semiconductors (SiC/GaN) are becoming the core materials for next-generation power devices due to their high breakdown field strength, high thermal conductivity, and high-frequency characteristics. They play a crucial role in efficient energy conversion applications such as electric vehicles and photovoltaic inverters. However, their performance and reliability are constrained by material defects (such as micropipe and dislocations in SiC, and interface states in GaN), device physical mechanisms (such as gate oxide degradation and current collapse), and failure issues under complex operating conditions. This paper systematically analyzes the synergistic relationship between material properties, device physics, and reliability, proposing solutions to key challenges through multi-dimensional synergistic mechanisms, such as NO annealing interface optimization of SiC and Fe co-doping trap engineering of GaN. It also suggests enhancing device performance through physical model correction and process innovation. The study shows that the full-chain optimization of structure-material-process-system is essential for advancing wide bandgap power devices towards higher reliability, greater power, and lower costs.  Future research will focus on large-scale substrate preparation, precise control of interface states, and reliability verification under extreme operating conditions to further expand their application potential .