LYU, Chenxian. Optimizing of Resistive Random Access Memory to Increase Its Practicability. Science and Technology of Engineering, Chemistry and Environmental Protection, [S. l.], v. 2, n. 6, p. 6382, 2024. DOI: 10.61173/7b1w0j62. Disponível em: https://stecep.deanfrancis.press/article/view/1216. Acesso em: 4 nov. 2026.