PAN, Lecheng. Research of Gate-All-Around Field-Effect Transistors. Science and Technology of Engineering, Chemistry and Environmental Protection, [S. l.], v. 2, n. 5, p. 3342, 2024. DOI: 10.61173/4gwhq846. Disponível em: https://stecep.deanfrancis.press/article/view/1541. Acesso em: 4 nov. 2026.